Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions

The continuous scaling of MOSFET devices into the nanoscale regime requires refined models for electron transport. Coulomb interactions must be considered because of two reasons. First the Coulomb force is a long range force implying that both the short and the long range interactions must be included in a particle ensemble. Second the hot-carrier and short-channel effects will have a significant impact on device performance due to the small number of carriers and impurities in the active region of nanoscale devices.